The DC bias voltage applied to the emitter base junction, makes it remain in forward biased condition. It also has decent switching characteristics (transition frequency is 100MHz) hence can amplify low-level signals.Ī transistor acts as an amplifier by raising the strength of a weak signal. The 2N5551 is an NPN amplifier transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. You can download the datasheet of 2N5551 from the link given below:ĢN5551 FAQ What are 2N5551 Amplifier Transistors ? †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.ġ.Dimensioning and tolerancing per ansi Y14.5M, 1982.ģ.Contour of package beyond dimension R is uncontrolled.Ĥ.Lead dimension is uncontrolled in P and beyond dimension K minimum. Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550 2N5551Ĭollector−Emitter Saturation Voltage Both Types (IC = 10 mAdc, IB = 1.0 mAdc) 2N5550 (IC = 50 mAdc, IB = 5.0 mAdc) 2N5551īase−Emitter Saturation Voltage Both Types (IC = 10 mAdc, IB = 1.0 mAdc) 2N5550 (IC = 50 mAdc, IB = 5.0 mAdc) 2N5551 (T A = 25☌ unless otherwise noted) CharacteristicĬollector−Emitter Breakdown Voltage (Note 1) 2N5550 (IC = 1.0 mAdc, IB = 0) 2N5551Ĭollector−Base Breakdown Voltage 2N5550 (IC = 100 ♚dc, IE = 0 ) 2N5551Įmitter−Base Breakdown Voltage (IE = 10 ♚dc, IC = 0) (Note: Microdot may be in either location) Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Functional operation above the Recommended Operating Conditions is not implied. Stresses exceeding Maximum Ratings may damage the device.

Operating and Storage Junction Temperature Range Total Device Dissipation T C= 25☌ Derate above 25☌ Total Device Dissipation T A = 25☌ Derate above 25☌

Persamaan transistor 2n5551